QPD3800
3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor
Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor.
The QPD38000 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD3800 can deliver PSAT of 85 W at 50 V operation.
Lead-free and ROHS compliant.
Last Time Buy: September 13, 2021
Contact your local sales representative for assistance.
主要特性
- Frequency Range: 3.4-3.8GHz
- Drain Voltage: 50V
- Output Power (P3dB): 85W
- Maximum Drain Efficiency: 70%
- NI-400 Ceramic Package
典型应用
- Wireless Communications
- Macro Cell Base Station
- Active Antennas
参数
技术文档
设计资源
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