QPD3601
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor.
The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD3601 can deliver PSAT of 180 W at 50 V operation.
Lead-free and ROHS compliant.
Last Time Buy: November 20, 2020
Contact your local sales representative for assistance.
主要特性
- Frequency Range: 3.4-3.6GHz, Band 42
- Drain Voltage: 50V
- Output Power (P3dB): 180W
- Maximum Drain Efficiency: 66%
- NI-400 Ceramic Package
典型应用
- Active Antennas
- Band 42
- Macro Cell Base Station
- Wireless Communications
参数
技术文档
设计资源
Need more support?
At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.
Forum
Engage with the Qorvo community, ask technical questions and share insights.
Support
Get technical, application or customer support plus updates on supply chain and FAQs.
Sales
Connect with our sales team to gain tailored solutions, expert guidance and access to the latest technologies.
