QPD1025L
960 - 1215 MHz, 1800 Watt, 65 Volt, GaN RF Input-Matched Transistor
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
主要特性
- Frequency Range: .96- 1.215 GHz
- Output Power (P3dB1): 1862 Watt
- Linear Gain1: 22.5 dB
- Typical PAE3dB1 77.2 %
- Operating voltage: 65 V
- CW and Pulse capable
典型应用
- IFF Transponders
- Avionics
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
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