QPD1025L
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- IFF Transponders
- Avionics
| 频率最小值(MHz) | 960 |
| 频率最大值(MHz) | 1,215 |
| 增益(dB) | 22.5 |
| Psat(dBm) | 62.7 |
| PAE(%) | 77.2 |
| Vd(V) | 65 |
| Idq(mA) | 1,500 |
| 封装类型 | NI-1230 (Eared) |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.