QPD1009
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor
关键性能
- Frequency range: DC - 4 GHz
- Output power (P3dB): 17 W at 2 GHz
- Linear gain: 24 dB typical at 2 GHz
- Typical PAE3dB: 72% at 2 GHz
- Operating voltage: 50V
- Low thermal resistance package
- CW and pulse capable
- 3 x 3 mm package
The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Civilian Radar
- Jammers
- Land Mobile Radio Communications
- Military Radar
- Military Radio
- Narrowband Amplifiers
- Test Instrumentation
- Wideband Amplifiers
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 4,000 |
| 增益(dB) | 24 |
| Psat(dBm) | 42.3 |
| PAE(%) | 72 |
| Vd(V) | 50 |
| Idq(mA) | 26 |
| 封装类型 | QFN |
| 封装(mm) | 3 x 3 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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