QPD1000
0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor
Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Last Time Buy: July 15, 2024
Recommended replacement for new designs: QPD1000A
Contact your local sales representative for assistance.
主要特性
- Frequency range: 0.03 - 1.215 GHz
- Output power (P3dB): 24 W at 1 GHz
- Linear gain: 19 dB typical at 1 GHz
- Typical PAE3dB: 78.2% at 1 GHz
- Operating voltage: 28V
- Low thermal resistance package
- CW and pulse capable
- 5 x 6 mm package
典型应用
- Civilian Radar
- Jammers
- Land Mobile Radio Communications
- Military Communications
- Military Radar
- Military Radio
- Narrowband Amplifiers
- Test Instrumentation
- Wideband Amplifiers
参数
技术文档
Product Data Sheet
数据手册Application Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Application Note: Understanding Thermal Analysis of RF Devices
应用笔记Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
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