QPD0405

4.4 - 5.0 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor

The QPD0405 is a dual-path discrete GaN on SiC HEMT in  DFN package which operates from 4.4 to 5.0 GHz. In each path is a single-stage amplifier transistor

QPD0405 can deliver PSAT of 22 W at +48 V operation through each path.

RoHS compliant.

中止的
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Data sheet available upon request.
Contact your local sales representative for assistance.End of Life announced June 15, 2021 (PCN 21-0130).
Last Time Buy: December 25, 2021
Contact your local sales representative for assistance.
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主要特性

  • Operating Frequency Range: 4400 - 5000 MHz
  • Operating Drain Voltage: +48 V
  • Output Power (PSAT): 22 W
  • Drain Efficiency: 75%
  • Linear Gain: 15.4 dB

典型应用

  • W-CDMA / LTE
  • Macrocell Base Station Driver
  • Microcell Base Station
  • Small Cell
  • Active Antenna
  • 5G Massive MIMO

参数

频率最小值 (MHz)
4,400
频率最大值 (MHz)
5,000
增益 (dB)
15.4
Psat (dBm)
43.4
Vd (V)
48
封装类型
DFN
封装 (mm)
7.0 x 6.5
RoHS
Yes
ECCN
5A991.g

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