QPD0030
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor
The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar and communications applications and can support both CW and pulsed mode of operations.
The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a microcell base station power amplifier.
The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
主要特性
- Frequency range: DC to 5 GHz
- Output Power (P3dB): 49 W at 2.2 GHz
- Linear Gain: 22.3 dB typical at 2.2 GHz
- Typical PAE3dB: 71.5 % at 2.2 GHz
- Operating voltage: 48V
- Low thermal resistance package
- CW and Pulse capable
典型应用
- Active Antennas
- Land Mobile Radio
- Micro Cell Base Station
- Military Radio Communications
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
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