QPD0030
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor
关键性能
- Frequency range: DC to 5 GHz
- Output Power (P3dB): 49 W at 2.2 GHz
- Linear Gain: 22.3 dB typical at 2.2 GHz
- Typical PAE3dB: 71.5 % at 2.2 GHz
- Operating voltage: 48V
- Low thermal resistance package
- CW and Pulse capable
The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar and communications applications and can support both CW and pulsed mode of operations.
The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a microcell base station power amplifier.
The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
特别应用
- Active Antennas
- Land Mobile Radio
- Micro Cell Base Station
- Military Radio Communications
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 5,000 |
| 增益(dB) | 22.3 |
| Psat(dBm) | 46.9 |
| PAE(%) | 71.5 |
| Vd(V) | 48 |
| Idq(mA) | 85 |
| 封装类型 | QFN |
| 封装(mm) | 4.0 x 3.0 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.