Qorvo's QPA3069 is a packaged, high-power S-band amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 2.7 - 3.5 GHz, the QPA3069 provides 50 dBm of saturated output power and 25 dB of large-signal gain while achieving 53% power-added efficiency.

The QPA3069 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements.
With good thermal properties, it can support a range of bias voltages.

The QPA3069 MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3069 is ideal for military radar systems.

Lead-free and RoHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.