QPA2213
2 - 20 GHz, 2 Watt GaN Amplifier
Qorvo's QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added
efficiency.
The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages.
The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both commercial and military wide band or narrow band systems.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
主要特性
- Frequency Range: 2 - 20 GHz
- PSAT (PIN=18 dBm): 34 dBm
- PAE (PIN=18 dBm): 23 %
- Power Gain (PIN=18 dBm): 16 dB
- Small Signal Gain: 25 dB
- Noise Figure: 4.0 dB
- Bias: VD = 18 V, IDQ = 330 mA, PIN = 18 dBm
- Package Dimensions: 4.50 x 4.50 x 1.74 mm
典型应用
- Military Radar
- Civilian Radar
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Qorvo Field-Proven GaN Solutions
手册RF Test and Measurement Solutions
手册
设计资源
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