QPA2213
2 - 20 GHz, 2 Watt GaN Amplifier
关键性能
- Frequency Range: 2 - 20 GHz
- PSAT (PIN=18 dBm): 34 dBm
- PAE (PIN=18 dBm): 23 %
- Power Gain (PIN=18 dBm): 16 dB
- Small Signal Gain: 25 dB
- Noise Figure: 4.0 dB
- Bias: VD = 18 V, IDQ = 330 mA, PIN = 18 dBm
- Package Dimensions: 4.50 x 4.50 x 1.74 mm
Qorvo’s QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added
efficiency.
The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages.
The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both commercial and military wide band or narrow band systems.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Military Radar
- Civilian Radar
| 频率最小值(GHz) | 2 |
| 频率最大值(GHz) | 20 |
| Pout(dBm) | 34 |
| 增益(dB) | 16 |
| PAE(%) | 23 |
| 电压(V) | 18 |
| 电流(mA) | 330 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |