QPA1019
4.5 - 7.0 GHz, 10 Watt GaN Power Amplifier
Qorvo's QPA1019 is a packaged high-power, C-band amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 4.5 – 7.0 GHz, the QPA1019 provides greater than 10 W of saturated output power and 19 dB of large-signal gain while achieving greater than 39% power-added efficiency.
The QPA1019 is packaged in a plastic overmold QFN with a Cu paddle offering easy handling with good thermal properties. As a result, the QPA1019 has bias flexibility allowing the user to vary the voltage to achieve optimum system performance while maintaining high reliability.
The QPA1019 is matched to 50 ohms with integrated DC blocking caps on both I/O ports. With the high performance, good thermal characteristics and ease of handling and system integration, the QPA1019 is ideal for radar and satellite communication systems.
Lead-free and RoHS compliant.
主要特性
- Frequency Range: 4.5 - 7.0 GHz
- PSAT (PIN=22 dBm): > 40 dBm
- PAE (PIN=22 dBm): > 40 %
- Power Gain (PIN=22 dBm): > 19 dB
- Integrated (power Detector)
- Bias: VD = 22 V, IDQ = 290 mA, VG = -2.5 V typical
- Package Dimensions: 5.0 x 5.0 x 0.85 mm
典型应用
- C-Band Radar
- Satellite Communication
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
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