关键性能
- Frequency Range: 7.9 - 11 GHz
- POUT: 42 dBm at PIN = 24 dBm
- PAE: 38 % at PIN = 24 dBm
- Large Signal Gain: 18 dB at PIN = 24 dBm
- Small Signal Gain: 25 dB
- Integrated Power Detector
- Bias: VD = 24 V, IDQ = 600 mA, VG = -1.8 V Typical
- Pulsed VD: PW = 100 us, DC = 10%
- Package Dimensions: 4.5 x 5.0 x 1.72 mm
Qorvo's QPA1010 is an X-band high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1010 operates from 7.9 - 11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
QPA1010 can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations.
The QPA1010 is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allows it support satellite communication and data links, as well as, military and commercial radar systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Satellite Communications
- Data Links
- Military and Commercial Radar
| 频率最小值(GHz) | 7.9 |
| 频率最大值(GHz) | 11 |
| Psat(dBm) | 42 |
| 增益(dB) | 25 |
| PAE(%) | 38 |
| 电压(V) | 24 |
| 电流(mA) | 600 |
| 封装类型 | QFN |
| 封装(mm) | 4.5 x 5.0 x 1.72 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.b.2.b.2 |