QPA1003P
1 - 8 GHz, 10 Watt GaN Power Amplifier
Qorvo's QPA1003P is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003P operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
The QPA1003P is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
主要特性
- Frequency Range: 1 - 8GHz
- PSAT: 40dBm
- PAE: 30 %
- Small Signal Gain: 30dB
- Return Loss: 11dB
- Bias: VD = 28V, IDQ = 650mA, VG = -2.2V Typical
- Package Dimensions: 5 x 6 x 1.76 mm
典型应用
- Electronic Warfare (EW)
- Radar
- Communications
- Test Instrumentation
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
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