关键性能
- On-resistance (RDS(on)): 23 mohm (typ)
- Maximum operating temperature: 175 °C
- Excellent reverse recovery: Qrr = 341 nC
- Low body diode VFSD: 1.2 V
- Low gate charge: QG = 37.8 nC
- Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive
Qorvo's UF4SC120023K4S is a 1200 V, 23 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
AEC-Q101 qualification in process. Please contact Sales for more information.
特别应用
- EV Charging
- PV Inverters
- Switched-Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
| VDS 最大值(V) | 1,200 |
| RDS(on) 典型值 @ 25C(mohm) | 23 |
| ID 最大值(A) | 53 |
| 代 | Gen 4 |
| Tj 最大值(°C) | 175 |
| 车规级认证 | No |
| 封装类型 | TO-247-4L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
这个产品出现在以下的应用框图中: