This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B module package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Advanced Ag sintering die attach technology gives the module superior thermal performance.
拓扑 | Half Bridge |
VDS 最大值(V) | 1,200 |
RDS(on) 典型值 @ 25C(mohm) | 9.4 |
ID 最大值(A) | 100 |
封装类型 | E1B |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |
Double pulse evaluation board is intended for pulse testing of SiC E1B modules. User Instructions and board details with schematics and layout can be downloaded below.
Download Half Bridge Modules Evaluation Board Details .zip file (3 MB)
For more details please refer to the SiC E1B Module DPT EVB user guide. This application note introduces Qorvo’s latest E1B power module DPT EVB (half-bridge and full bridge) and shares PCB design and waveforms of Qorvo SiC E1B modules and practical design tips to implement the fast-switching E1B module successfully and reliably.
To request a board for the UHB100SC12E1BC3N E1B module, please Contact Us.