UF4C120053K3S

    1200 V, 53 mohm SiC FET

    关键性能

    • On-resistance (RDS(on)): 53 mohm (typ)
    • Maximum operating temperature: 175 °C
    • Excellent reverse recovery: Qrr = 117 nC
    • Low body diode VFSD: 1.28 V
    • Low gate charge: QG = 37.8 nC
    • Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive

    Qorvo's UF4C120053K3S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

    AEC-Q101 qualification in process. Please contact Sales for more information.

    特别应用

      • EV Charging
      • PV Inverters
      • Switched-Mode Power Supplies
      • Power Factor Correction Modules
      • Motor Drives
      • Induction Heating
    VDS 最大值(V) 1,200
    RDS(on) 典型值 @ 25C(mohm) 53
    ID 最大值(A) 34
    Gen 4
    Tj 最大值(°C) 175
    车规级认证 No
    封装类型 TO-247-3L
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

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