Qorvo's UF4C120053K3S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
AEC-Q101 qualification in process. Please contact Sales for more information.
VDS 最大值(V) | 1,200 |
RDS(on) 典型值 @ 25C(mohm) | 53 |
ID 最大值(A) | 34 |
代 | Gen 4 |
Tj 最大值(°C) | 175 |
车规级认证 | No |
封装类型 | TO-247-3L |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |
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